SSF2N60F 600v n-channel mosfet www.goodark.com page 1 of 7 rev.1.1 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 2 i d @ tc = 100c continuous drain current, v gs @ 10v 1.3 i dm pulsed drain current 8 a power dissipation 23 w p d @tc = 25c linear derating factor 0.18 w/c v ds drain-source voltage 600 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=55mh 110 mj i as avalanche current @ l=55mh 2 a t j t stg operating junction and storage temperature range -55 to +150 c v dss 600v r ds (on) 3.6ohm(typ.) i d 2a to220f marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product it utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SSF2N60F 600v n-channel mosfet www.goodark.com page 2 of 7 rev.1.1 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 5.5 /w junction-to-ambient (t 10s) 62 /w r ja junction-to-ambient (pcb mounted, steady-state) 40 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 v v gs = 0v, id = 250a 3.6 4 v gs =10v,i d = 1a r ds(on) static drain-to-source on-resistance 8.01 t j = 125 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.17 v t j = 125 1 v ds = 600v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125 100 v gs =30v i gss gate-to-source forward leakage -100 na v gs = -30v q g total gate charge 11.5 q gs gate-to-source charge 2.7 q gd gate-to-drain("miller") charge 4.5 nc i d = 2a, v ds =480v, v gs = 10v t d(on) turn-on delay time 9.4 t r rise time 7.4 t d(off) turn-off delay time 25.4 t f fall time 20.8 ns v gs =10v, vds=300v, r l =150, r gen =25 id=2a c iss input capacitance 323 c oss output capacitance 40 c rss reverse transfer capacitance 5 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 2 a i sm pulsed source current (body diode) 8 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.86 1.3 v i s =2a, v gs =0v t rr reverse recovery time 259.3 ns q rr reverse recovery charge 1419 nc t j = 25c, i f =2a, di/dt = 100a/s
SSF2N60F 600v n-channel mosfet www.goodark.com page 3 of 7 rev.1.1 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c
SSF2N60F 600v n-channel mosfet www.goodark.com page 4 of 7 rev.1.1 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature
SSF2N60F 600v n-channel mosfet www.goodark.com page 5 of 7 rev.1.1 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6.typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance, junction-to-case
SSF2N60F 600v n-channel mosfet www.goodark.com page 6 of 7 rev.1.1 mechanical data min nom max min nom max e 9.960 10.160 10.360 0.392 0.400 0.408 e1 9.840 10.040 10.240 0.387 0.395 0.403 e2 6.800 7.000 7.200 0.268 0.276 0.283 a 4.600 4.700 4.800 0.181 0.185 0.189 a1 2.440 2.540 2.640 0.096 0.100 0.104 a2 2.660 2.760 2.860 0.105 0.109 0.113 a3 0.600 0.700 0.800 0.024 0.028 0.031 c - 0.500 - - 0.020 - d 15.780 15.870 15.980 0.621 0.625 0.629 d1 8.970 9.170 9.370 0.353 0.361 0.369 h1 6.500 6.700 6.800 0.256 0.264 0.268 e p 3.080 3.180 3.280 0.121 0.125 0.129 p 1 1.400 1.500 1.600 0.055 0.059 0.063 p 2 0.900 1.000 1.100 0.035 0.039 0.043 p 3 0.100 0.200 0.300 0.004 0.008 0.012 l 12.780 12.980 13.180 0.503 0.511 0.519 l1 2.970 3.170 3.370 0.117 0.125 0.133 l2 0.830 0.930 1.030 0.033 0.037 0.041 q 1 3 o 5 o 7 o 3 o 5 o 7 o q 2 43 o 45 o 47 o 43 o 45 o 47 o b1 1.180 1.280 1.380 0.046 0.050 0.054 b2 0.760 0.800 0.840 0.030 0.031 0.033 b3 - - 1.420 - - 0.056 symbol dimension in millimeters dimension in inches 2.54bsc 0.10bsc to220f package outline dimension_gn
SSF2N60F 600v n-channel mosfet www.goodark.com page 7 of 7 rev.1.1 ordering and marking information device marking: SSF2N60F package (available) to220f operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to220f 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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